Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Populaire auteurs
Cram101 Textbook Reviews (948) J.S. Bach (447) Wolfgang Amadeus Mozart (305) Collectif (268) Schrijf als eerste een recensie over dit item (259) Doug Gelbert (238) Princess of Patterns (211) Charles Dickens (209) R.B. Grimm (197) Carolyn Keene (187) Jules Verne (183) Philipp Winterberg (180) William Shakespeare (174) Youscribe (172) Lucas Nicolato (169) Edgar Allan Poe (166) Herman Melville (166) Anonymous (165) Gilad Soffer (164) Robert Louis Stevenson (159)Populaire gewichtsboeken
418 KB 425 KB 435 KB 459 KB 445 KB 439 KB 386 KB 413 KB 493 KB 432 KB 455 KB 471 KB 421 KB 451 KB 485 KB 472 KB 416 KB 369 KB 419 KB 427 KB